Samsung PM961 Polaris 128GB M.2 NGFF PCIe Gen3 x4, NVME Solid State Drive SSD, OEM (2280) (MZVLW128HEGR-00000)

Price: [price_with_discount]
(as of [price_update_date] – Details)

[ad_1] The top-ranging PM961 makes use of 2-bit MLC V-NAND flash and provides sequential reads of up to 3,000 MB/s and sequential writes of up to 1,150 MB/s.
Likewise, random reads and writes are listed at 450K IOPS and 400K IOPS respectively.
The PM961 is available in 128GB, 256GB, 512GB and 1TB capacities. Samsung’s Client Edition Solid-State Drives (SSDs) use the latest in-house NAND Flash and an advanced in-house controller to deliver superior performance,
exceptional reliability, and minimal power drain, while securing your files with leading-edge data protection.
Samsung SSDs feature superior sequential read and write speeds, along with first-class random read and write levels.
These drives are ideal for heavy performance-centric uses, such as multi-tasking, complex data manipulation, and high-performance gaming.
SSDs represent the first major advancement in primary storage technology in years.
Upgrading to a Samsung SSD might be the most important computer upgrade you ever make.
Samsung SSD users will experience dramatic improvements in boot time, shutdown, application loads, web browsing, application installations, and file copies.
When accessing data, SSDs regularly outperform traditional Hard Disk Drives (HDDs) by as much as 100 times.
Due to their precision engineering and super-thin design, Samsung SSDs can be installed easily in most PCs, ultrabooks, and notebooks to replace outdated HDDs.
SSDs lack moving mechanical parts, resulting in extremely short startup and shutdown/standby times and extended durability.
Samsung SSDs feature leading-edge data protection, eliminating any concerns about data theft.
Samsung SSDs will transform your computing experience with their revolutionary random access speeds, multi-tasking prowess, and outstanding durability and reliability.

Model PM961, Interface PCI Express Gen3 x4, Form Factor M.2 NVME
Capacity128GB, Flash 2-bit MLC V-NAND
Sequential Read Up to 2800 MB/s, Sequential Write Up to 600 MB/s
Random Read Up to 140K IOPS,Random Write Up to 40K IOPS
Supply Voltage / Tolerance +3.3V ± 5%,Physical dimension Width: 22.00 ± 0.15 mmLength: 80.00 ± 0.15


[ad_2]